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Part Number: 2SJ621-T1B
SKU: 310978
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 92492 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package/Case SC-96-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 3.5 A
Rds On - Drain-Source Resistance 44 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.25 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 200 ns
Height 0.8 mm
Length 2.9 mm
Product Type MOSFET
Rise Time 70 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 320 ns
Typical Turn-On Delay Time 20 ns
CNHTS 8541290000
USHTS 8541290095
Width 1.5 mm
TARIC 8541290000
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package/Case SC-96-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 3.5 A
Rds On - Drain-Source Resistance 44 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.25 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 200 ns
Height 0.8 mm
Length 2.9 mm
Product Type MOSFET
Rise Time 70 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 320 ns
Typical Turn-On Delay Time 20 ns
CNHTS 8541290000
USHTS 8541290095
Width 1.5 mm
TARIC 8541290000
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