2SJ625-T1B

Part Number: 2SJ625-T1B

SKU: 325256

Manufacturer: Renesas Electronics

Description: MOSFET

Rohs State: Need to verify

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Availability: 60855 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Renesas Electronics
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SC-96-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3 A
Rds On - Drain-Source Resistance	113 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	1.25 W
Channel Mode	Enhancement
Brand	Renesas Electronics
Configuration	Single
Fall Time	250 ns
Height	1 mm (Max)
Length	2.9 mm
Product Type	MOSFET
Rise Time	190 ns
Product Group	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	220 ns
Typical Turn-On Delay Time	39 ns
CNHTS	8541290000
TARIC	8541290000
Width	1.5 mm
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Renesas Electronics
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SC-96-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3 A
Rds On - Drain-Source Resistance	113 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	1.25 W
Channel Mode	Enhancement
Brand	Renesas Electronics
Configuration	Single
Fall Time	250 ns
Height	1 mm (Max)
Length	2.9 mm
Product Type	MOSFET
Rise Time	190 ns
Product Group	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	220 ns
Typical Turn-On Delay Time	39 ns
CNHTS	8541290000
TARIC	8541290000
Width	1.5 mm
USHTS	8541290095

2SJ625-T1B

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