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2SJ648-T1-A

Part Number: 2SJ648-T1-A
SKU: 69905
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 15640 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-75-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 400 mA
Rds On - Drain-Source Resistance 1.45 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 200 mW
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 33 ns
Height 0.9 mm
Length mm
Product Type MOSFET
Rise Time 39 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 23 ns
CNHTS 8541210000
TARIC 8541290000
Width mm
USHTS 8541290095
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  • 2SJ648-T1-A Renesas Electronics
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-75-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 400 mA
Rds On - Drain-Source Resistance 1.45 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 200 mW
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 33 ns
Height 0.9 mm
Length mm
Product Type MOSFET
Rise Time 39 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 23 ns
CNHTS 8541210000
TARIC 8541290000
Width mm
USHTS 8541290095
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