Search
Part Number: 2SK3573
SKU: 110563
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 68768 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 83 A
Rds On - Drain-Source Resistance 4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.5 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 40 ns
Height 15 mm (Max)
Length 10.6 mm (Max)
Product Type MOSFET
Rise Time 23 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 23 ns
Width 4.8 mm (Max)
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 83 A
Rds On - Drain-Source Resistance 4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.5 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 40 ns
Height 15 mm (Max)
Length 10.6 mm (Max)
Product Type MOSFET
Rise Time 23 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 23 ns
Width 4.8 mm (Max)
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
Filters
Sort
display