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NP100P06PDG-E1-AY

Part Number: NP100P06PDG-E1-AY
SKU: 309062
Manufacturer: Renesas Electronics
Description: MOSFET LOW VOLTAGE POWER MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 25923 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-263-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 300 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 200 W
Channel Mode Enhancement
Package Style Tube
Brand Renesas Electronics
Height 4.9 mm
Length 10 mm
Product Type MOSFET
Standard Pack Quantity 800
Product Group MOSFETs
Width 9.15 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.139332 oz
USHTS 8541290095
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  • NP100P06PDG-E1-AY Renesas Electronics
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-263-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 300 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 200 W
Channel Mode Enhancement
Package Style Tube
Brand Renesas Electronics
Height 4.9 mm
Length 10 mm
Product Type MOSFET
Standard Pack Quantity 800
Product Group MOSFETs
Width 9.15 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.139332 oz
USHTS 8541290095
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