Search
Part Number: NP36P06SLG-E1-AY
SKU: 285977
Manufacturer: Renesas Electronics
Description: MOSFET MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 55707 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Renesas Electronics NP36P06SLG-E1-AY is available at WIN SOURCE. Please review product page below for detailed information, including NP36P06SLG-E1-AY price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NP36P06SLG-E1-AY to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 36 A
Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Package Style Tube
Brand Renesas Electronics
Configuration Single
Fall Time 110 ns
Height 2.65 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 12 ns
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 190 ns
Typical Turn-On Delay Time 7 ns
Width 6.1 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 36 A
Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Package Style Tube
Brand Renesas Electronics
Configuration Single
Fall Time 110 ns
Height 2.65 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 12 ns
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 190 ns
Typical Turn-On Delay Time 7 ns
Width 6.1 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Filters
Sort
display