0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

NP50P04SDG-E1-AY

Part Number: NP50P04SDG-E1-AY
SKU: 34149
Manufacturer: Renesas Electronics
Description: MOSFET LOW VOLTAGE POWER MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 32245 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 9.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Package Style Reel
Brand Renesas Electronics
Configuration Single
Fall Time 180 ns
Height 2.65 mm
Length 6.5 mm
Moisture Sensitive Yes
Product MOSFET Small Signal
Product Type MOSFET
Rise Time 13 ns
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 405 ns
Typical Turn-On Delay Time 13 ns
Width 6.1 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
  • NP50P04SDG-E1-AY Price
  • NP50 Series
  • NP50P04SDG-E1-AY Datasheet
  • NP50P04SDG-E1-AY Application
  • NP50P04SDG-E1-AY Pdf
  • NP50P04SDG-E1-AY Pinout
  • NP50P04SDG-E1-AY Image
  • NP50P04SDG-E1-AY Picture
  • NP50P04SDG-E1-AY In Stock
  • NP50P04SDG-E1-AY Distributor
  • NP50P04SDG-E1-AY MOSFET
  • NP50P04SDG-E1-AY Renesas Electronics
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 9.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Package Style Reel
Brand Renesas Electronics
Configuration Single
Fall Time 180 ns
Height 2.65 mm
Length 6.5 mm
Moisture Sensitive Yes
Product MOSFET Small Signal
Product Type MOSFET
Rise Time 13 ns
Standard Pack Quantity 2500
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 405 ns
Typical Turn-On Delay Time 13 ns
Width 6.1 mm
CNHTS 8541290000
CAHTS 8541210000
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display