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NP50P04SDG-E2-AY

Part Number: NP50P04SDG-E2-AY
SKU: 105376
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 32672 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 9.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 180 ns
Height 2.65 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 13 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 405 ns
Typical Turn-On Delay Time 13 ns
Width 6.1 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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  • NP50P04SDG-E2-AY Renesas Electronics
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 9.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 1.2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 180 ns
Height 2.65 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 13 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 405 ns
Typical Turn-On Delay Time 13 ns
Width 6.1 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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