Search
Part Number: UPA1919TE-T1-AT
SKU: 331466
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 22520 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Renesas Electronics UPA1919TE-T1-AT is available at WIN SOURCE. Please review product page below for detailed information, including UPA1919TE-T1-AT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for UPA1919TE-T1-AT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-95-6
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 58 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 65 ns
Height 1.2 mm
Length 1.5 mm
Product Type MOSFET
Rise Time 19 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 47 ns
Typical Turn-On Delay Time 15 ns
Width 2.9 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000212 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SC-95-6
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 58 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 65 ns
Height 1.2 mm
Length 1.5 mm
Product Type MOSFET
Rise Time 19 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 47 ns
Typical Turn-On Delay Time 15 ns
Width 2.9 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000212 oz
USHTS 8541290095
Filters
Sort
display