Search
Part Number: UPA2722UT1A-E1-AY
SKU: 285477
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 8372 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Renesas Electronics UPA2722UT1A-E1-AY is available at WIN SOURCE. Please review product page below for detailed information, including UPA2722UT1A-E1-AY price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for UPA2722UT1A-E1-AY to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape HVSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 29 A
Rds On - Drain-Source Resistance 3.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 4.6 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 40 ns
Height 1 mm
Length 5.4 mm
Product Type MOSFET
Rise Time 20 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 129 ns
Typical Turn-On Delay Time 31 ns
Width 5 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.027197 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape HVSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 29 A
Rds On - Drain-Source Resistance 3.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 4.6 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 40 ns
Height 1 mm
Length 5.4 mm
Product Type MOSFET
Rise Time 20 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 129 ns
Typical Turn-On Delay Time 31 ns
Width 5 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.027197 oz
USHTS 8541290095
Filters
Sort
display