UPA2730TP-E1-AZ

Part Number: UPA2730TP-E1-AZ

SKU: 295722

Manufacturer: Renesas Electronics

Description: MOSFET

Rohs State: Need to verify

Free Sample Request: Request Free Samples

Availability: 75403 in stock

Delivery Date: 4-7 days

Call for pricing

Renesas Electronics UPA2730TP-E1-AZ is available at WIN SOURCE. Please review product page below for detailed information, including UPA2730TP-E1-AZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for UPA2730TP-E1-AZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

Specifications
Contact Us

Products specifications

Manufacturer(MFG)	Renesas Electronics
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	HSOP-8
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	42 A
Rds On - Drain-Source Resistance	7 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	3 W
Channel Mode	Enhancement
Brand	Renesas Electronics
Configuration	Single
Fall Time	110 ns
Height	mm
Length	4.4 mm
Product Type	MOSFET
Rise Time	28 ns
Product Group	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	190 ns
Typical Turn-On Delay Time	20 ns
Width	5.2 mm
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.027197 oz
USHTS	8541290095

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	Renesas Electronics
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	HSOP-8
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	42 A
Rds On - Drain-Source Resistance	7 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	3 W
Channel Mode	Enhancement
Brand	Renesas Electronics
Configuration	Single
Fall Time	110 ns
Height	mm
Length	4.4 mm
Product Type	MOSFET
Rise Time	28 ns
Product Group	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	190 ns
Typical Turn-On Delay Time	20 ns
Width	5.2 mm
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.027197 oz
USHTS	8541290095

UPA2730TP-E1-AZ

Request For UPA2730TP-E1-AZ