0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

uPA622TT-E1-A

Part Number: uPA622TT-E1-A
SKU: 200437
Manufacturer: Renesas Electronics
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 12068 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape WSOF-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 82 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 50 ns
Height 0.8 mm
Length 1.6 mm
Product Type MOSFET
Rise Time 28 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns
Typical Turn-On Delay Time 10 ns
CNHTS 8541290000
TARIC 8541290000
Width 2 mm
USHTS 8541290095
  • uPA622TT-E1-A Price
  • uPA6 Series
  • uPA622TT-E1-A Datasheet
  • uPA622TT-E1-A Application
  • uPA622TT-E1-A Pdf
  • uPA622TT-E1-A Pinout
  • uPA622TT-E1-A Image
  • uPA622TT-E1-A Picture
  • uPA622TT-E1-A In Stock
  • uPA622TT-E1-A Distributor
  • uPA622TT-E1-A MOSFET
  • uPA622TT-E1-A Renesas Electronics
Products specifications
Manufacturer(MFG) Renesas Electronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape WSOF-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 82 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Brand Renesas Electronics
Configuration Single
Fall Time 50 ns
Height 0.8 mm
Length 1.6 mm
Product Type MOSFET
Rise Time 28 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns
Typical Turn-On Delay Time 10 ns
CNHTS 8541290000
TARIC 8541290000
Width 2 mm
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display