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ams
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UPA650TT-E2-A
UPA650TT-E2-A
Part Number:
UPA650TT-E2-A
SKU:
130367
Manufacturer:
Renesas Electronics
Description:
MOSFET
Rohs State:
Need to verify
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Availability:
64387 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Renesas Electronics
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
WSOF-6
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
12 V
Id - Continuous Drain Current
5 A
Rds On - Drain-Source Resistance
50 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.4 W
Channel Mode
Enhancement
Brand
Renesas Electronics
Configuration
Single
Fall Time
315 ns
Height
0.8 mm
Length
1.6 mm
Product Type
MOSFET
Rise Time
200 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
400 ns
Typical Turn-On Delay Time
50 ns
CNHTS
8541290000
TARIC
8541290000
Width
2 mm
USHTS
8541290095
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Renesas Electronics
Products specifications
Manufacturer(MFG)
Renesas Electronics
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
WSOF-6
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
12 V
Id - Continuous Drain Current
5 A
Rds On - Drain-Source Resistance
50 mOhms
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.4 W
Channel Mode
Enhancement
Brand
Renesas Electronics
Configuration
Single
Fall Time
315 ns
Height
0.8 mm
Length
1.6 mm
Product Type
MOSFET
Rise Time
200 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
400 ns
Typical Turn-On Delay Time
50 ns
CNHTS
8541290000
TARIC
8541290000
Width
2 mm
USHTS
8541290095
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