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Part Number: 2N5551CSM-JQR-B
SKU: 318301
Manufacturer: Semelab / TT Electronics
Description: Bipolar Transistors - BJT TRANS BI-POLAR SS
Rohs State: Need to verify
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Availability: 63774 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) TT Electronics
Part Category Bipolar Transistors - BJT
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 160 V
Collector- Base Voltage VCBO 180 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 0.2 V
Power Dissipation 350 mW
Gain Bandwidth Product fT 300 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Brand Semelab / TT Electronics
Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 80 at 10 mA, 5 V
DC Current Gain hFE Max 250 at 10 mA, 5 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 100
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541210075
Products specifications
Manufacturer(MFG) TT Electronics
Part Category Bipolar Transistors - BJT
Mounting Type Style Through Hole
Package Shape TO-92-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 160 V
Collector- Base Voltage VCBO 180 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 0.2 V
Power Dissipation 350 mW
Gain Bandwidth Product fT 300 MHz
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Brand Semelab / TT Electronics
Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 80 at 10 mA, 5 V
DC Current Gain hFE Max 250 at 10 mA, 5 V
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 100
Product Group Transistors
TARIC 8541210000
ECCN EAR99
Material Silicon
USHTS 8541210075
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