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2N3209

Part Number: 2N3209
SKU: 218862
Manufacturer: STMicroelectronics
Description: Bipolar Transistors - BJT
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 72357 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category Bipolar Transistors - BJT
Mounting Type Style Through Hole
Package Shape TO-18
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 4 V
Maximum DC Collector Current 0.2 A
Power Dissipation 360 mW
Gain Bandwidth Product fT 400 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series 2N3209
Brand STMicroelectronics
DC Collector/Base Gain hfe Min 25
Height 5.3 mm
Length 5.8 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 1000
Product Group Transistors
Material Silicon
TARIC 8541210000
ECCN EAR99
Width 5.8 mm
USHTS 8541210095
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  • 2N3209 STMicroelectronics
Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category Bipolar Transistors - BJT
Mounting Type Style Through Hole
Package Shape TO-18
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 4 V
Maximum DC Collector Current 0.2 A
Power Dissipation 360 mW
Gain Bandwidth Product fT 400 MHz
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Series 2N3209
Brand STMicroelectronics
DC Collector/Base Gain hfe Min 25
Height 5.3 mm
Length 5.8 mm
Product Type BJTs - Bipolar Transistors
Standard Pack Quantity 1000
Product Group Transistors
Material Silicon
TARIC 8541210000
ECCN EAR99
Width 5.8 mm
USHTS 8541210095
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