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Bipolar Transistors - BJT
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2STN2540-A
2STN2540-A
Part Number:
2STN2540-A
SKU:
200775
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT Low voltage PNP Power bipolar trans
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
54552 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
STMicroelectronics
Part Category
Bipolar Transistors - BJT
Shipping Restrictions
This product may require additional documentation to export from the United States.
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-223-4
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
5 A
Power Dissipation
1600 mW
Operating Temperature(Min)
- 65 C
Operating Temperature(Max)
+ 150 C
Series
2STN2540
Package Style
Reel
Brand
STMicroelectronics
DC Collector/Base Gain hfe Min
250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V, 50 at 5 A, 2 V
DC Current Gain hFE Max
250 at 500 mA, 2 V
Height
1.8 mm
Length
6.3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
3.3 mm
CNHTS
8542319000
TARIC
8542319000
MXHTS
8542310399
ECCN
3A001
Per Pcs Weight
0.003951 oz
USHTS
8542310001
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2STN2540-A
Bipolar Transistors - BJT
2STN2540-A
STMicroelectronics
Products specifications
Manufacturer(MFG)
STMicroelectronics
Part Category
Bipolar Transistors - BJT
Shipping Restrictions
This product may require additional documentation to export from the United States.
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-223-4
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
5 A
Power Dissipation
1600 mW
Operating Temperature(Min)
- 65 C
Operating Temperature(Max)
+ 150 C
Series
2STN2540
Package Style
Reel
Brand
STMicroelectronics
DC Collector/Base Gain hfe Min
250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V, 50 at 5 A, 2 V
DC Current Gain hFE Max
250 at 500 mA, 2 V
Height
1.8 mm
Length
6.3 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
3.3 mm
CNHTS
8542319000
TARIC
8542319000
MXHTS
8542310399
ECCN
3A001
Per Pcs Weight
0.003951 oz
USHTS
8542310001
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