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IRF630M

Part Number: IRF630M
SKU: 251281
Manufacturer: STMicroelectronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 62688 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 9 A
Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Power Dissipation 75 W
Channel Mode Enhancement
Package Style Tube
Brand STMicroelectronics
Configuration Single
Fall Time 12 ns
Height 9.15 mm
Length 10.4 mm
Product Type MOSFET
Rise Time 15 ns
Series IRF630M
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 10 ns
Width 4.6 mm
CNHTS 8541290000
USHTS 8541290095
Per Pcs Weight 2 g
TARIC 8541290000
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Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 9 A
Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Power Dissipation 75 W
Channel Mode Enhancement
Package Style Tube
Brand STMicroelectronics
Configuration Single
Fall Time 12 ns
Height 9.15 mm
Length 10.4 mm
Product Type MOSFET
Rise Time 15 ns
Series IRF630M
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 10 ns
Width 4.6 mm
CNHTS 8541290000
USHTS 8541290095
Per Pcs Weight 2 g
TARIC 8541290000
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