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IRF640ST4

Part Number: IRF640ST4
SKU: 284555
Manufacturer: STMicroelectronics
Description: MOSFET
Rohs State: Need to verify
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Availability: 69345 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Power Dissipation 125 W
Channel Mode Enhancement
Brand STMicroelectronics
Configuration Single
Fall Time 25 ns
Height 4.6 mm
Length 10.4 mm
Product Type MOSFET
Rise Time 27 ns
Series IRF640
Product Group MOSFETs
Transistor Type 1 N-Channel
Width 9.35 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) STMicroelectronics
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Power Dissipation 125 W
Channel Mode Enhancement
Brand STMicroelectronics
Configuration Single
Fall Time 25 ns
Height 4.6 mm
Length 10.4 mm
Product Type MOSFET
Rise Time 27 ns
Series IRF640
Product Group MOSFETs
Transistor Type 1 N-Channel
Width 9.35 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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