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TSM055N03EPQ56
TSM055N03EPQ56
Part Number:
TSM055N03EPQ56
SKU:
249172
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 30V, 80A, Single N-Channel Power MOSFET
Rohs State:
Need to verify
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Availability:
22528 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
PDFN56-8
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
80 A
Rds On - Drain-Source Resistance
4.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V
Qg - Gate Charge
11.1 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
74 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
9.6 ns
Product Type
MOSFET
Rise Time
14.5 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35.2 ns
Typical Turn-On Delay Time
7.5 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.013143 oz
USHTS
8541290095
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Taiwan Semiconductor
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
PDFN56-8
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
80 A
Rds On - Drain-Source Resistance
4.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V
Qg - Gate Charge
11.1 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
74 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
9.6 ns
Product Type
MOSFET
Rise Time
14.5 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35.2 ns
Typical Turn-On Delay Time
7.5 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.013143 oz
USHTS
8541290095
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