TSM10N06CP

Part Number: TSM10N06CP

SKU: 287449

Manufacturer: Taiwan Semiconductor

Description: MOSFET 60V 5Amp N channel Mosfet

Rohs State: Need to verify

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Availability: 20503 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	65 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	10.5 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	45 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	10 ns
Forward Transconductance - Min	13 S
Product Type	MOSFET
Rise Time	15 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011640 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	65 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	10.5 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	45 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	10 ns
Forward Transconductance - Min	13 S
Product Type	MOSFET
Rise Time	15 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011640 oz
USHTS	8541290095

TSM10N06CP

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