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Semiconductors
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TSM10P06CP
TSM10P06CP
Part Number:
TSM10P06CP
SKU:
87297
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET
Rohs State:
Need to verify
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Availability:
40378 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
TO-252-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
130 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
37 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
6 S
Product Type
MOSFET
Rise Time
9 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
7 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.011640 oz
USHTS
8541290095
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Taiwan Semiconductor
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
TO-252-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
130 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
37 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
6 S
Product Type
MOSFET
Rise Time
9 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
7 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.011640 oz
USHTS
8541290095
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