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TSM12N65CI

Part Number: TSM12N65CI
SKU: 30340
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
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Availability: 88315 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 800 mOhms
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 41 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 45 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 90 ns
Forward Transconductance - Min 10 S
Product Type MOSFET
Rise Time 85 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 140 ns
Typical Turn-On Delay Time 30 ns
CNHTS 8541290000
USHTS 8541290095
Per Pcs Weight 2 g
TARIC 8541290000
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  • TSM12N65CI Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 800 mOhms
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 41 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 45 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 90 ns
Forward Transconductance - Min 10 S
Product Type MOSFET
Rise Time 85 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 140 ns
Typical Turn-On Delay Time 30 ns
CNHTS 8541290000
USHTS 8541290095
Per Pcs Weight 2 g
TARIC 8541290000
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