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TSM1412CU6 RF

Part Number: TSM1412CU6 RF
SKU: 251728
Manufacturer: Taiwan Semiconductor
Description: MOSFET 20V 3Amp N channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 51593 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5 A
Rds On - Drain-Source Resistance 28 mOhms
Vgs th - Gate-Source Threshold Voltage 450 mV
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.6 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 5.9 ns
Forward Transconductance - Min 40 S
Product Type MOSFET
Rise Time 1.4 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13.5 ns
Typical Turn-On Delay Time 0.53 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000265 oz
USHTS 8541290095
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  • TSM1412CU6 RF Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5 A
Rds On - Drain-Source Resistance 28 mOhms
Vgs th - Gate-Source Threshold Voltage 450 mV
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.6 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 5.9 ns
Forward Transconductance - Min 40 S
Product Type MOSFET
Rise Time 1.4 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13.5 ns
Typical Turn-On Delay Time 0.53 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000265 oz
USHTS 8541290095
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