TSM190N08CZ

Part Number: TSM190N08CZ

SKU: 101361

Manufacturer: Taiwan Semiconductor

Description: MOSFET 75V, 190A, Single N-Channel Power MOSFET

Rohs State: Need to verify

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Availability: 79979 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	75 V
Id - Continuous Drain Current	190 A
Rds On - Drain-Source Resistance	3.4 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	160 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	250 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	45 ns
Product Type	MOSFET
Product Group	MOSFETs
Transistor Type	75 V
Type	N-Channel
Typical Turn-Off Delay Time	85 ns
Typical Turn-On Delay Time	25 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.068784 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	75 V
Id - Continuous Drain Current	190 A
Rds On - Drain-Source Resistance	3.4 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	160 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	250 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	45 ns
Product Type	MOSFET
Product Group	MOSFETs
Transistor Type	75 V
Type	N-Channel
Typical Turn-Off Delay Time	85 ns
Typical Turn-On Delay Time	25 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.068784 oz
USHTS	8541290095

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