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TSM1N45CT A3G

Part Number: TSM1N45CT A3G
SKU: 284536
Manufacturer: Taiwan Semiconductor
Description: MOSFET 450V N Channel Pwr MOSFET
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 67340 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-92-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 450 V
Id - Continuous Drain Current 500 mA
Rds On - Drain-Source Resistance 4.25 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 23.7 ns
Product Type MOSFET
Rise Time 32.8 ns
Standard Pack Quantity 10000
Product Group MOSFETs
Typical Turn-Off Delay Time 25.2 ns
CNHTS 8541290000
USHTS 8541290095
Typical Turn-On Delay Time 14.7 ns
TARIC 8541290000
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package/Case TO-92-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 450 V
Id - Continuous Drain Current 500 mA
Rds On - Drain-Source Resistance 4.25 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 23.7 ns
Product Type MOSFET
Rise Time 32.8 ns
Standard Pack Quantity 10000
Product Group MOSFETs
Typical Turn-Off Delay Time 25.2 ns
CNHTS 8541290000
USHTS 8541290095
Typical Turn-On Delay Time 14.7 ns
TARIC 8541290000
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