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TSM1NB60CP

Part Number: TSM1NB60CP
SKU: 10201
Manufacturer: Taiwan Semiconductor
Description: MOSFET 600V, 1A, Single N-Channel Power MOSFET
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 3896 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 1 A
Rds On - Drain-Source Resistance 8 Ohms
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 6.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 39 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 14.9 ns
Forward Transconductance - Min 0.8 S
Product Type MOSFET
Rise Time 6.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 15.3 ns
Typical Turn-On Delay Time 7.7 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 1 A
Rds On - Drain-Source Resistance 8 Ohms
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 6.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 39 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 14.9 ns
Forward Transconductance - Min 0.8 S
Product Type MOSFET
Rise Time 6.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 15.3 ns
Typical Turn-On Delay Time 7.7 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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