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Part Number: TSM200N03DPQ33 RGG
SKU: 160489
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V 20A Dual N-Chann el Power MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 3900 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape PDFN-33-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 17 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 4.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 20 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Dual
Fall Time 4.6 ns
Forward Transconductance - Min 13 S
Product Type MOSFET
Rise Time 7.2 ns
Standard Pack Quantity 15000
Product Group MOSFETs
Transistor Type Dual N-Channel PowerMOSFET
Typical Turn-Off Delay Time 15.8 ns
Typical Turn-On Delay Time 2.8 ns
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.010729 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape PDFN-33-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 17 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 4.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 20 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Dual
Fall Time 4.6 ns
Forward Transconductance - Min 13 S
Product Type MOSFET
Rise Time 7.2 ns
Standard Pack Quantity 15000
Product Group MOSFETs
Transistor Type Dual N-Channel PowerMOSFET
Typical Turn-Off Delay Time 15.8 ns
Typical Turn-On Delay Time 2.8 ns
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.010729 oz
USHTS 8541290095
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