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TSM210N06CZ

Part Number: TSM210N06CZ
SKU: 40320
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 70969 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 210 A
Rds On - Drain-Source Resistance 2.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 160 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 250 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 45 ns
Product Type MOSFET
Rise Time 40 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 85 ns
Typical Turn-On Delay Time 25 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 210 A
Rds On - Drain-Source Resistance 2.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 160 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 250 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 45 ns
Product Type MOSFET
Rise Time 40 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 85 ns
Typical Turn-On Delay Time 25 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
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