US Dollar
Euro
Register
Log in
Wishlist
0
Shopping cart
0
0
You have no items in your shopping cart.
Menu
Search
Personal menu
Wishlist
0
Shopping cart
0
Close
Home Page
Products
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
Contact Us
About Us
Menu
Home Page
Products
Close
Back
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
Close
Back
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
View All
Contact Us
About Us
Home
/
Semiconductors
/
Discrete Semiconductors
/
Transistors
/
MOSFET
/
TSM2313CX RF
TSM2313CX RF
Part Number:
TSM2313CX RF
SKU:
255037
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V P Channel MOSFET
Rohs State:
Need to verify
Free Sample Request:
Request Free Samples
Request For TSM2313CX RF
Please log in to request free sample.
Availability:
78318 in stock
Delivery Date:
4-7 days
Call for pricing
Share
facebook
twitter
pinterest
google+
Specifications
Contact Us
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
3.3 A
Rds On - Drain-Source Resistance
55 mOhms
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
11 S
Product Type
MOSFET
Rise Time
35 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
22 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.000282 oz
USHTS
8541290095
Your name
Your email
Enquiry
Product Related Search
TSM2313CX RF
Price
TSM2 Series
TSM2313CX RF
Datasheet
TSM2313CX RF
Application
TSM2313CX RF
Pdf
TSM2313CX RF
Pinout
TSM2313CX RF
Image
TSM2313CX RF
Picture
TSM2313CX RF
In Stock
TSM2313CX RF
Distributor
TSM2313CX RF
MOSFET
TSM2313CX RF
Taiwan Semiconductor
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOT-23-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
3.3 A
Rds On - Drain-Source Resistance
55 mOhms
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage
600 mV
Qg - Gate Charge
6 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
11 S
Product Type
MOSFET
Rise Time
35 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
22 ns
Typical Turn-On Delay Time
22 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.000282 oz
USHTS
8541290095
Filters
Sort
display