0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM2N7002AKDCU6 RFG

Part Number: TSM2N7002AKDCU6 RFG
SKU: 168000
Manufacturer: Taiwan Semiconductor
Description: MOSFET 60V, 0.22A, Dual N-Channel Power MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 33429 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 220 mA
Rds On - Drain-Source Resistance 2.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 91 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 240 mW
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Dual
Fall Time 50 ns
Forward Transconductance - Min 0.5 S
Product Type MOSFET
Rise Time 10 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 4 ns
CNHTS 8541210000
CAHTS 8541100090
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Per Pcs Weight 0.000265 oz
USHTS 8541210095
  • TSM2N7002AKDCU6 RFG Price
  • TSM2 Series
  • TSM2N7002AKDCU6 RFG Datasheet
  • TSM2N7002AKDCU6 RFG Application
  • TSM2N7002AKDCU6 RFG Pdf
  • TSM2N7002AKDCU6 RFG Pinout
  • TSM2N7002AKDCU6 RFG Image
  • TSM2N7002AKDCU6 RFG Picture
  • TSM2N7002AKDCU6 RFG In Stock
  • TSM2N7002AKDCU6 RFG Distributor
  • TSM2N7002AKDCU6 RFG MOSFET
  • TSM2N7002AKDCU6 RFG Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-363-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 220 mA
Rds On - Drain-Source Resistance 2.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 91 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 240 mW
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Dual
Fall Time 50 ns
Forward Transconductance - Min 0.5 S
Product Type MOSFET
Rise Time 10 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 4 ns
CNHTS 8541210000
CAHTS 8541100090
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Per Pcs Weight 0.000265 oz
USHTS 8541210095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display