0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM2NB60CZ

Part Number: TSM2NB60CZ
SKU: 91174
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 80210 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 9.4 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 70 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Forward Transconductance - Min 1.5 S
Product Type MOSFET
Rise Time 9.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 17.4 ns
Typical Turn-On Delay Time 9.1 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
  • TSM2NB60CZ Price
  • TSM2 Series
  • TSM2NB60CZ Datasheet
  • TSM2NB60CZ Application
  • TSM2NB60CZ Pdf
  • TSM2NB60CZ Pinout
  • TSM2NB60CZ Image
  • TSM2NB60CZ Picture
  • TSM2NB60CZ In Stock
  • TSM2NB60CZ Distributor
  • TSM2NB60CZ MOSFET
  • TSM2NB60CZ Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 9.4 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 70 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Forward Transconductance - Min 1.5 S
Product Type MOSFET
Rise Time 9.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 17.4 ns
Typical Turn-On Delay Time 9.1 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display