0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM320N03CX RFG

Part Number: TSM320N03CX RFG
SKU: 226114
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V, 5.5A, Single N-Channel Power MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 28191 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5.5 A
Rds On - Drain-Source Resistance 27 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 8.9 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.8 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 28 ns
Product Type MOSFET
Rise Time 32 ns
Standard Pack Quantity 12000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 5.8 ns
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541290095
  • TSM320N03CX RFG Price
  • TSM3 Series
  • TSM320N03CX RFG Datasheet
  • TSM320N03CX RFG Application
  • TSM320N03CX RFG Pdf
  • TSM320N03CX RFG Pinout
  • TSM320N03CX RFG Image
  • TSM320N03CX RFG Picture
  • TSM320N03CX RFG In Stock
  • TSM320N03CX RFG Distributor
  • TSM320N03CX RFG MOSFET
  • TSM320N03CX RFG Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5.5 A
Rds On - Drain-Source Resistance 27 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 8.9 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.8 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 28 ns
Product Type MOSFET
Rise Time 32 ns
Standard Pack Quantity 12000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 5.8 ns
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display