0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM3460CX6

Part Number: TSM3460CX6
SKU: 309815
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V N Channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 66854 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-26-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 30 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 15 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 2000 ns
Forward Transconductance - Min 30 S
Product Type MOSFET
Rise Time 210 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 3700 ns
Typical Turn-On Delay Time 140 ns
CNHTS 8541290000
CAHTS 8541100090
TARIC 8541100000
MXHTS 85411001
ECCN EAR99
Per Pcs Weight 0.000529 oz
USHTS 8541100080
  • TSM3460CX6 Price
  • TSM3 Series
  • TSM3460CX6 Datasheet
  • TSM3460CX6 Application
  • TSM3460CX6 Pdf
  • TSM3460CX6 Pinout
  • TSM3460CX6 Image
  • TSM3460CX6 Picture
  • TSM3460CX6 In Stock
  • TSM3460CX6 Distributor
  • TSM3460CX6 MOSFET
  • TSM3460CX6 Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-26-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 30 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 15 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Package Style Reel
Brand Taiwan Semiconductor
Configuration Single
Fall Time 2000 ns
Forward Transconductance - Min 30 S
Product Type MOSFET
Rise Time 210 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 3700 ns
Typical Turn-On Delay Time 140 ns
CNHTS 8541290000
CAHTS 8541100090
TARIC 8541100000
MXHTS 85411001
ECCN EAR99
Per Pcs Weight 0.000529 oz
USHTS 8541100080
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display