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TSM3460CX6 RF

Part Number: TSM3460CX6 RF
SKU: 29059
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V N Channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 1941 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-26-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 200 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 15 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 2000 ns
Forward Transconductance - Min 30 S
Product Type MOSFET
Rise Time 210 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 3700 ns
Typical Turn-On Delay Time 140 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000529 oz
USHTS 8541290095
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  • TSM3460CX6 RF MOSFET
  • TSM3460CX6 RF Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOT-26-6
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 200 mOhms
Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 15 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 1.3 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 2000 ns
Forward Transconductance - Min 30 S
Product Type MOSFET
Rise Time 210 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 3700 ns
Typical Turn-On Delay Time 140 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.000529 oz
USHTS 8541290095
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