0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM35N03CP RO

Part Number: TSM35N03CP RO
SKU: 243040
Manufacturer: Taiwan Semiconductor
Description: MOSFET 25V N Channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 66012 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 35 V
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 6.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 57 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 6 ns
Forward Transconductance - Min 12 S
Product Type MOSFET
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 12 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
  • TSM35N03CP RO Price
  • TSM3 Series
  • TSM35N03CP RO Datasheet
  • TSM35N03CP RO Application
  • TSM35N03CP RO Pdf
  • TSM35N03CP RO Pinout
  • TSM35N03CP RO Image
  • TSM35N03CP RO Picture
  • TSM35N03CP RO In Stock
  • TSM35N03CP RO Distributor
  • TSM35N03CP RO MOSFET
  • TSM35N03CP RO Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 35 V
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 6.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 57 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 6 ns
Forward Transconductance - Min 12 S
Product Type MOSFET
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 12 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display