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TSM35N03PQ56

Part Number: TSM35N03PQ56
SKU: 101359
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 32577 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape PDFN56-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 5.5 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 8.2 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 35 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7 ns
Product Type MOSFET
Rise Time 9 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 9 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.013143 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape PDFN56-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 5.5 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 8.2 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 35 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7 ns
Product Type MOSFET
Rise Time 9 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 9 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.013143 oz
USHTS 8541290095
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