TSM3900DCX6 RF

Part Number: TSM3900DCX6 RF

SKU: 300006

Manufacturer: Taiwan Semiconductor

Description: MOSFET Dual 20V N Channel MOSFET

Rohs State: Need to verify

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Availability: 14052 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2 A
Rds On - Drain-Source Resistance	45 mOhms
Vgs th - Gate-Source Threshold Voltage	650 mV
Qg - Gate Charge	3.69 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	2 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	4.07 ns
Forward Transconductance - Min	5 S
Product Type	MOSFET
Rise Time	7.56 ns
Product Group	MOSFETs
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	16.61 ns
Typical Turn-On Delay Time	6.16 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.000529 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOT-26-6
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2 A
Rds On - Drain-Source Resistance	45 mOhms
Vgs th - Gate-Source Threshold Voltage	650 mV
Qg - Gate Charge	3.69 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	2 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	4.07 ns
Forward Transconductance - Min	5 S
Product Type	MOSFET
Rise Time	7.56 ns
Product Group	MOSFETs
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	16.61 ns
Typical Turn-On Delay Time	6.16 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.000529 oz
USHTS	8541290095

TSM3900DCX6 RF

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