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Semiconductors
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Discrete Semiconductors
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TSM40N03PQ33
TSM40N03PQ33
Part Number:
TSM40N03PQ33
SKU:
151789
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET
Rohs State:
Need to verify
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Availability:
53405 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
PDFN33-8
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
40 A
Rds On - Drain-Source Resistance
3.6 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.15 V
Qg - Gate Charge
12 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
52 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
15 ns
Product Type
MOSFET
Rise Time
20 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Type
N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
25 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.010729 oz
USHTS
8541290095
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TSM40N03PQ33
Taiwan Semiconductor
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
PDFN33-8
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
40 A
Rds On - Drain-Source Resistance
3.6 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1.15 V
Qg - Gate Charge
12 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
52 W
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
15 ns
Product Type
MOSFET
Rise Time
20 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Type
N-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
25 ns
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.010729 oz
USHTS
8541290095
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