0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM4415CS RL

Part Number: TSM4415CS RL
SKU: 239766
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V P Channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 32236 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOP-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 21 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 3 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7.3 ns
Forward Transconductance - Min 11.5 S
Product Type MOSFET
Rise Time 4.4 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42.8 ns
Typical Turn-On Delay Time 20.5 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.002926 oz
USHTS 8541290095
  • TSM4415CS RL Price
  • TSM4 Series
  • TSM4415CS RL Datasheet
  • TSM4415CS RL Application
  • TSM4415CS RL Pdf
  • TSM4415CS RL Pinout
  • TSM4415CS RL Image
  • TSM4415CS RL Picture
  • TSM4415CS RL In Stock
  • TSM4415CS RL Distributor
  • TSM4415CS RL MOSFET
  • TSM4415CS RL Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOP-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 21 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18.1 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 3 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7.3 ns
Forward Transconductance - Min 11.5 S
Product Type MOSFET
Rise Time 4.4 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42.8 ns
Typical Turn-On Delay Time 20.5 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.002926 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display