Search
Part Number: TSM4431CS RL
SKU: 333312
Manufacturer: Taiwan Semiconductor
Description: MOSFET 30V P Channel MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 90922 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Taiwan Semiconductor TSM4431CS RL is available at WIN SOURCE. Please review product page below for detailed information, including TSM4431CS RL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM4431CS RL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOP-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5.8 A
Rds On - Drain-Source Resistance 29 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18.09 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.5 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7.35 ns
Forward Transconductance - Min 4 S
Product Type MOSFET
Rise Time 4.43 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42.81 ns
Typical Turn-On Delay Time 20.52 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.002926 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOP-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5.8 A
Rds On - Drain-Source Resistance 29 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18.09 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2.5 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 7.35 ns
Forward Transconductance - Min 4 S
Product Type MOSFET
Rise Time 4.43 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42.81 ns
Typical Turn-On Delay Time 20.52 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.002926 oz
USHTS 8541290095
Filters
Sort
display