TSM60N03CP

Part Number: TSM60N03CP

SKU: 292309

Manufacturer: Taiwan Semiconductor

Description: MOSFET

Rohs State: Need to verify

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Availability: 6619 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	3.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.15 V
Qg - Gate Charge	12 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	41 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	15 ns
Product Type	MOSFET
Rise Time	20 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Type	N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	25 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011640 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	3.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.15 V
Qg - Gate Charge	12 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	41 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	15 ns
Product Type	MOSFET
Rise Time	20 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Type	N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	25 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011640 oz
USHTS	8541290095

TSM60N03CP

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