TSM60N600CH C5G

Part Number: TSM60N600CH C5G

SKU: 232345

Manufacturer: Taiwan Semiconductor

Description: MOSFET 600V, 8A, Single N-Channel Power MOSFET

Rohs State: Need to verify

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Availability: 54702 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-251-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	490 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	13 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	83 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	9 ns
Product	Rectifiers
Product Type	MOSFET
Rise Time	15 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	21 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011993 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-251-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	490 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	13 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	83 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	9 ns
Product	Rectifiers
Product Type	MOSFET
Rise Time	15 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	21 ns
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.011993 oz
USHTS	8541290095

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