0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

TSM60N750CH

Part Number: TSM60N750CH
SKU: 263121
Manufacturer: Taiwan Semiconductor
Description: MOSFET Power MOSFET, N-CHAN 600V, 6A, 750mOhm
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 55320 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-251-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 530 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 10.8 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 62.5 W
Channel Mode Enhancement
Package Style Tube
Brand Taiwan Semiconductor
Configuration Single
Fall Time 22 ns
Product Type MOSFET
Rise Time 22 ns
Standard Pack Quantity 1875
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 17.3 ns
MACRO NEO Part Number TSM60N750CH C5G
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011993 oz
USHTS 8541290095
  • TSM60N750CH Price
  • TSM6 Series
  • TSM60N750CH Datasheet
  • TSM60N750CH Application
  • TSM60N750CH Pdf
  • TSM60N750CH Pinout
  • TSM60N750CH Image
  • TSM60N750CH Picture
  • TSM60N750CH In Stock
  • TSM60N750CH Distributor
  • TSM60N750CH MOSFET
  • TSM60N750CH Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-251-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 530 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 10.8 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 62.5 W
Channel Mode Enhancement
Package Style Tube
Brand Taiwan Semiconductor
Configuration Single
Fall Time 22 ns
Product Type MOSFET
Rise Time 22 ns
Standard Pack Quantity 1875
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 17.3 ns
MACRO NEO Part Number TSM60N750CH C5G
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011993 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display