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TSM6NB60CZ

Part Number: TSM6NB60CZ
SKU: 319519
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
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Availability: 62513 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 19 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 125 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 6.8 ns
Product Type MOSFET
Rise Time 9.4 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 35.6 ns
Typical Turn-On Delay Time 23 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 19 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 125 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 6.8 ns
Product Type MOSFET
Rise Time 9.4 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Type N-Channel
Typical Turn-Off Delay Time 35.6 ns
Typical Turn-On Delay Time 23 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.068784 oz
USHTS 8541290095
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