TSM85N10CZ

Part Number: TSM85N10CZ

SKU: 161751

Manufacturer: Taiwan Semiconductor

Description: MOSFET 100V, 81A, Single N-Channel Power MOSFET

Rohs State: Need to verify

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Availability: 21254 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	81 A
Rds On - Drain-Source Resistance	9 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	154 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	210 W, 2.4 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	72 ns
Product Type	MOSFET
Rise Time	65 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	218 ns
Typical Turn-On Delay Time	38 ns
TARIC	8541290000
Per Pcs Weight	0.068784 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	81 A
Rds On - Drain-Source Resistance	9 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	154 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	210 W, 2.4 W
Channel Mode	Enhancement
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	72 ns
Product Type	MOSFET
Rise Time	65 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	218 ns
Typical Turn-On Delay Time	38 ns
TARIC	8541290000
Per Pcs Weight	0.068784 oz
USHTS	8541290095

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