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TSM8N50CP

Part Number: TSM8N50CP
SKU: 151788
Manufacturer: Taiwan Semiconductor
Description: MOSFET 500V 8 Amp N channel Mosfet
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 28201 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 7.2 A
Rds On - Drain-Source Resistance 700 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 26.6 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 89 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 4.8 ns
Product Type MOSFET
Rise Time 6.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 42 ns
Typical Turn-On Delay Time 22 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 7.2 A
Rds On - Drain-Source Resistance 700 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 26.6 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 89 W
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 4.8 ns
Product Type MOSFET
Rise Time 6.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 42 ns
Typical Turn-On Delay Time 22 ns
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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