TSM8N80CI C0G

Part Number: TSM8N80CI C0G

SKU: 334393

Manufacturer: Taiwan Semiconductor

Description: MOSFET 800V 8A Single N-Cha nnel Power MOSFET

Rohs State: Need to verify

Free Sample Request: Request Free Samples

Availability: 7533 in stock

Delivery Date: 4-7 days

Call for pricing

Taiwan Semiconductor TSM8N80CI C0G is available at WIN SOURCE. Please review product page below for detailed information, including TSM8N80CI C0G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM8N80CI C0G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

Specifications
Contact Us

Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	ITO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V
Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	1.1 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	41 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	40.3 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	37 ns
Forward Transconductance - Min	7 S
Product Type	MOSFET
Rise Time	30 ns
Standard Pack Quantity	2000
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	37 ns
Typical Turn-On Delay Time	133 ns
CNHTS	8541290000
CAHTS	8541100090
JPHTS	854110090
KRHTS	8541299000
TARIC	8541100000
MXHTS	8541100101
ECCN	EAR99
Per Pcs Weight	0.211644 oz
USHTS	8541290095

Your name

Your email

Enquiry

Products specifications

Manufacturer(MFG)	Taiwan Semiconductor
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	ITO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V
Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	1.1 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	41 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	40.3 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Taiwan Semiconductor
Configuration	Single
Fall Time	37 ns
Forward Transconductance - Min	7 S
Product Type	MOSFET
Rise Time	30 ns
Standard Pack Quantity	2000
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	37 ns
Typical Turn-On Delay Time	133 ns
CNHTS	8541290000
CAHTS	8541100090
JPHTS	854110090
KRHTS	8541299000
TARIC	8541100000
MXHTS	8541100101
ECCN	EAR99
Per Pcs Weight	0.211644 oz
USHTS	8541290095

TSM8N80CI C0G

Request For TSM8N80CI C0G