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TSM9NB50CI

Part Number: TSM9NB50CI
SKU: 141612
Manufacturer: Taiwan Semiconductor
Description: MOSFET
Rohs State: Need to verify
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Availability: 29157 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape ITO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 9 A
Rds On - Drain-Source Resistance 720 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 44 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 5.7 ns
Product Type MOSFET
Rise Time 46.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13.3 ns
Typical Turn-On Delay Time 27.4 ns
TARIC 8541290000
Per Pcs Weight 0.211644 oz
USHTS 8541290095
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  • TSM9NB50CI Taiwan Semiconductor
Products specifications
Manufacturer(MFG) Taiwan Semiconductor
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape ITO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 9 A
Rds On - Drain-Source Resistance 720 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 44 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Channel Mode Enhancement
Brand Taiwan Semiconductor
Configuration Single
Fall Time 5.7 ns
Product Type MOSFET
Rise Time 46.8 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13.3 ns
Typical Turn-On Delay Time 27.4 ns
TARIC 8541290000
Per Pcs Weight 0.211644 oz
USHTS 8541290095
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