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TSM9NB50CZ
TSM9NB50CZ
Part Number:
TSM9NB50CZ
SKU:
211892
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
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Availability:
39224 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
9 A
Rds On - Drain-Source Resistance
720 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
44 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
5.7 ns
Product Type
MOSFET
Rise Time
46.8 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
13.3 ns
Typical Turn-On Delay Time
27.4 ns
TARIC
8541290000
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Taiwan Semiconductor
Products specifications
Manufacturer(MFG)
Taiwan Semiconductor
Part Category
MOSFET
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
9 A
Rds On - Drain-Source Resistance
720 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
44 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Channel Mode
Enhancement
Brand
Taiwan Semiconductor
Configuration
Single
Fall Time
5.7 ns
Product Type
MOSFET
Rise Time
46.8 ns
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
13.3 ns
Typical Turn-On Delay Time
27.4 ns
TARIC
8541290000
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