2SK3079ATE12LQ

Part Number: 2SK3079ATE12LQ

SKU: 90226

Manufacturer: Toshiba

Description: RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS

Rohs State: Need to verify

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Availability: 98908 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Toshiba
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	3 A
Vds - Drain-Source Breakdown Voltage	10 V
Operating Frequency	470 MHz
Gain	13.5 dB
Output Power	2.2 W
Mounting Type Style	SMD/SMT
Package Shape	PW-X-4
Package Style	Reel
Brand	Toshiba
Configuration	Single
Power Dissipation	20 W
Product Type	RF MOSFET Transistors
Series	2SK3079
Standard Pack Quantity	1000
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	3 V
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Vgs th - Gate-Source Threshold Voltage	0.8 V
USHTS	8541210075

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Products specifications

Manufacturer(MFG)	Toshiba
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	3 A
Vds - Drain-Source Breakdown Voltage	10 V
Operating Frequency	470 MHz
Gain	13.5 dB
Output Power	2.2 W
Mounting Type Style	SMD/SMT
Package Shape	PW-X-4
Package Style	Reel
Brand	Toshiba
Configuration	Single
Power Dissipation	20 W
Product Type	RF MOSFET Transistors
Series	2SK3079
Standard Pack Quantity	1000
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	3 V
CNHTS	8541210000
CAHTS	8541210000
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99
Vgs th - Gate-Source Threshold Voltage	0.8 V
USHTS	8541210075

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